Factory/PlantSemiconductors & electronics

Micron Memory Japan holds groundbreaking for Hiroshima fab expansion

Micron Memory JapanHigashihiroshima, HiroshimaPublished Jul 13, 2026

Investment¥1.5T

PhaseUnder construction

StartJul 13, 2026

Completion—

Today

Past the scheduled completion date.

Micron broke ground on a new cleanroom building at its Hiroshima fab (Higashihiroshima) to scale production of advanced memory for AI, committing about ¥1.5 trillion in total across the phased build-out. Phase I covers roughly 28,000 sqm; Fujita Corporation is the general construction partner, with production equipment move-in slated for late 2028. The fab - Japan's only DRAM manufacturing site, rooted in the former Elpida operation - will produce next-generation memory including EUV-based 1-gamma DRAM. The project is backed by up to ¥536bn of METI support announced in September 2025.

Project facts

Owner: Micron Memory Japan
Facility: Factory/Plant
Sector: Semiconductors & electronics
Location: Higashihiroshima, Hiroshima, Japan
Investment: ¥1.5T — (total, phased)
Contractor: Fujita Corporation
Construction start: Jul 13, 2026
Announced: Jul 4, 2026
Themes: semiconductor-supply-chain

Figures and schedules are as announced by the company or the public body concerned; plans can change. Amounts that were not disclosed are recorded as not disclosed, never estimated.

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